US5U35 transistor 1/5 4v drive pch+sbd mosfet US5U35 z structure silicon p-channel mosfet schottky barrier diode z features 1) the US5U35 combines pch mosfet with a schottky barrier diode in a tumt5 package. 2) with fast switching. 3) built-in schottky barrier diode has low forward voltage. z applications switching z packaging specifications US5U35 tr 3000 type package code taping basic ordering unit (pieces) (1)gate (2)source (3)anode (4)cathode (5)drain ? 1 esd protection diode ? 2 body diode ? 2 ? 1 (1) (2) (5) (3) (4) z dimension s ( unit : mm ) z e q uivalent circuit tumt5 abbreviated symbol : u35 2.0 1.3 0.2max.
US5U35 transistor 2/5 z absolute maximum ratings (ta=25 c) v rm v r i f i fsm tj parameter v v dss symbol ? 45 v v gss 20 a i d 0.7 a i dp 2.8 a i s ? 0.4 a i sp ? 2.8 v 40 ma 100 a 1.0 c 150 c tch 150 v 45 limits unit channel temperature w / element p d 0.7 power dissipation w / total p d 1.0 c tstg ? 55 to +150 power dissipation range of storage temperature drain-source voltage gate-source voltage drain current continuous pulsed continuous pulsed source current (body diode) repetitive peak reverse voltage reverse voltage forward current forward current surge peak junction temperature ? 1 ? 1 ? 3 ? 2 w / element p d 0.5 power dissipation ? 3 ? 3 ? 1 pw 10 s, duty cycle 1% ? 2 60hz 1cyc. ? 3 mounted on a ceramic board z electrical characteristics (ta=25 c) r l 36 ?, parameter symbol i gss y fs av gs = 20v, v ds =0v v dd ? 25 v v dd ? 25 v, unit conditions v (br) dss vi d = ? 1ma, v gs =0v i dss av ds = ? 45v, v gs =0v v gs (th) vv ds = ? 10v, i d = ? 1ma ? i d = ? 0.7a, v gs = ? 10v r ds (on) ? i d = ? 0.7a, v gs = ? 4.5v ? i d = ? 0.35a, v gs = ? 4.0v sv ds = ? 10v, i d = ? 0.7a c iss pf v ds = ? 10v c oss pf v gs =0v c rss pf f=1mhz t d (on) ns i d = ? 0.35a t r ns t d (off) ns v gs = ? 10v t f ns r l 71 ? q g nc r g =10 ? r g =10 ? q gs ? typ. ? ? ? 0.6 0.9 1.0 ? 120 14 11 6 5 17 6 1.7 0.8 0.5 nc v gs = ? 5v q gd min. ? ? 45 ? ? 1.0 ? ? ? 0.6 ? ? ? ? ? ? ? ? ? ? 10 max. ? ? 1 ? 2.5 0.8 1.3 1.4 ? ? ? ? ? ? ? ? ? ? ? nc i d = ? 0.7a ? ? ? ? ? ? gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge ? pulsed ? ? pulsed < mosfet > v sd ??? 1.2 v i s = ? 0.7a, v gs =0v forward voltage parameter symbol min. typ. max. unit conditions < body diode (source ? drain) > ?? 0.55 v i f =100ma i r ?? 30 av r =10v reverse current v f forward voltage parameter symbol min. typ. max. unit conditions < di >
US5U35 transistor 3/5 z electrical characteristic curves fig.1 typical transfer characteristics 1.0 0.0001 0.01 0.001 1 0.1 1.5 gate-source voltage : ? v gs (v) drain current : ? i d (a) 2.0 2.5 3.0 4.0 3.5 ta = 125 c ta = 75 c ta = 25 c ta =? 25 c v ds = ? 10v pulsed fig.2 static drain-source on-state resistance vs. drain current( ) 0.01 0.1 0.1 1 10 1 drain current : ? i d (a) static drain-source on-state resistance : r ds (on) ( ? ) v gs = ? 10v pulsed ta = 125 c ta = 75 c ta = 25 c ta =? 25 c fig.3 static drain-source on-state resistance vs. drain current( ? ) 0.01 0.1 0.1 1 10 1 ta = 125 c ta = 75 c ta = 25 c ta =? 25 c v gs = ? 4.5v pulsed drain current : ? i d (a) static drain-source on-state resistance : r ds (on) ( ? ) fig.4 static drain-source on-state resistance vs. drain current( ?? ) 0.01 0.1 0.1 1 10 1 ta = 125 c ta = 75 c ta = 25 c ta =? 25 c v gs = ? 4v pulsed drain current : ? i d (a) static drain-source on-state resistance : r ds (on) ( ? ) 0.01 0.1 1 10 100 drain-source voltage : ? v ds (v) fig.5 typical capacitance vs. drain-source voltage 1 10 1000 100 capacitance : c (pf) c iss c oss c rss ta = 25 c f = 1mhz v gs = 0v 0.01 0.1 1 drain current : ? i d (a) fig.6 switching characteristics 1 10 1000 100 t d(off) t d(on) t r t f switching time : t (ns) ta = 25 c v dd = ? 25v v gs = ? 10v r g =10 ? pulsed fig.7 dynamic input characteristics 01 0 4 10 4 total gate charge : qg (nc) gate-source voltage : ? v gs (v) 23 2 6 8 ta = 25 c v dd = ? 25v i d = ? 0.7a r g =10 ? pulsed 0 0.5 1.0 source-drain voltage : ? v sd (v) fig.8 source current vs. source-drain voltage 0.0001 source current : ? i s (a) 0.001 0.01 0.1 1 1.5 v gs =0v pulsed ta = 125 c ta = 75 c ta = 25 c ta =? 25 c drain current : ? i d (a) fig.9 forward transfer admittance vs.drain current forward transfer admittance : yfs (s) 0.01 0.1 1 10 0.001 0.1 0.01 1 ta = 125 c ta = 75 c ta = 25 c ta =? 25 c v gs = ? 10v pulsed
US5U35 transistor 4/5 z notice 1. sbd has a large reverse leak current compared to other type of diode. therefore; it would raise a junction temperature, and increase a reverse power loss. further rise of inside temperature would cause a thermal runaway. this built-in sbd has low v f characteristics and therefore, higher leak current. please consider enough the surrounding temperature, generating heat of mosfet and the reverse current. 2. this product might cause chip aging and breakdown under the large electrified environment. please consider to design esd protection circuit. 0.01 0.1 1 10 100 1000 10000 0 5 10 15 20 25 30 35 40 reverse voltage : vr [v] reverse current : ir [ua] pulsed ta= - 25 ta = 25 ta = 125 ta = 75 fig.10 reverse current vs. reverse voltage 0.001 0.01 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 forward voltage : vf(v) forward current : if(a) pulsed ta= - 25 ta = 25 ta = 125 ta = 75 fig.11 forward current vs. forward voltage
US5U35 transistor 5/5 z measurement circuits fig.12 switching time measurement circuit v gs r g v ds d.u.t. i d r l v dd 90% 10% 90% 10% 10% v gs v ds 90% t f t off t d(off) t r t on t d(on) fig.13 switching waveforms 50% 50% pulse width fig.14 gate charge measurement circuit v gs r g v ds d.u.t. i d r l v dd i g (const) fig.15 gate charge waveforms v gs qg qgs qgd v g charge
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